Bonded aluminum wire

Bonded aluminum wire is a kind of metal wire used in the field of electronic packaging to achieve the interconnection between the chip and the package. Through energies such as pressurization, heating, and ultrasonic waves, and with the help of the bonding method, the electrode bonding pads of the bare chip are connected to the input/output leads of the electronic package or the metal wiring bonding pads on the substrate.

Composition Classification: It mainly includes pure aluminum wire, aluminum-silicon wire, aluminum-magnesium wire, etc. To reduce the corrosion of the packaging material on the lead wire, sometimes a trace amount of Ni element is added.

Wire Diameter Classification: It can be divided into thin aluminum wire and thick aluminum wire. Usually, the aluminum wire with a wire diameter below φ50 is called thin aluminum wire, and the aluminum wire with a diameter greater than or equal to φ75 is called thick aluminum wire. The wire diameter of thick aluminum wire is usually greater than 100μm.

Performance Characteristics:

① Low cost. Compared with traditional gold bonding wires, aluminum bonding wires have a lower material price cost and have an obvious price advantage.

② Good electrical conductivity. High-purity aluminum wire has good electrical conductivity and can meet the electrical connection requirements of electronic devices.

③ Excellent corrosion resistance. It has good corrosion resistance in some environments and can ensure the stability of bonding.

Application Fields:

Power Semiconductor Devices: Such as field-effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), etc. Thick aluminum wire bonding is a mainstream way to achieve high-power electrical performance interconnection.

Wide Bandgap Semiconductor Devices: It has also been widely used in the packaging of these emerging semiconductor devices.

LED Digital Tube Products, COB Surface Light Sources: It is used to achieve the interconnection between the chip and external pins as well as between chips, and it is a key technology in the manufacturing process of these products.

Bonding Process

Main Form: It is wedge bonding, usually carried out at room temperature. Using a wedge bonding tool as a tool, through ultrasonic bonding, only parameters such as ultrasonic energy, pressure, and time are required to form a solder joint. The aluminum wire is rubbed against the welding surface to remove the oxide layer on the welding surface and make the welding surface undergo plastic deformation, and at the same time, diffuse each other to form a good molecular bond.

Bonding Failure Factors: Including insufficient purity of the aluminum wire or inappropriate alloy composition, poor surface condition, high humidity in the bonding operation environment, too high or too low bonding temperature, insufficient or excessive pressure, mismatch between the flux and the aluminum wire, damage or contamination of the aluminum wire during processing or storage, failure or improper adjustment of the bonding equipment, etc.

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